Name Card

Full name Familienname, Vorname
Stampfer, Bernhard
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 29 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Artikel Article 2022
2Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja ; Stampfer, Bernhard ; Reisinger, Hans ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsArtikel Article 2022
3Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja Anna ; Stampfer, Bernhard ; Reisinger, H. ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsBuchbeitrag Book Contribution 2022
4Waltl-2021-Microelectronics Reliability-vor.pdf.jpgWaltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of single-defects on the variability of CMOS inverter circuitsArticle Artikel Nov-2021
5Hernandez, Yoanlys ; Stampfer, Bernhard ; Grasser, Tibor ; Waltl, Michael Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor TechnologiesArtikel Article 2021
6Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael On the Distribution of Single Defect Threshold Voltage Shifts in SiON TransistorsArtikel Article 2021
7Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021
8Grasser, T. ; O'Sullivan, B. ; Kaczer, B. ; Franco, J. ; Stampfer, B. ; Waltl, M. CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast StatesKonferenzbeitrag Inproceedings 2021
9Michl, J. ; Grill, Alexander ; Stampfer, B. ; Waldhoer, D. ; Schleich, Christian ; Knobloch, T. ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, B. ; Parvais, B. ; Govoreanu, Bogdan ; Radu, I. ; Grasser, T. ; Waltl, M. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSInproceedings Konferenzbeitrag2021
10Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of Single-Defects on the Variability of CMOS Inverter CircuitsArtikel Article 2021
11Stampfer, Bernhard ; Schanovsky, Franz ; Grasser, Tibor ; Waltl, Michael Semi-Automated Extraction of the Distribution of Single Defects for nMOS TransistorsArtikel Article 23-Apr-2020
12Stampfer, Bernhard ; Simicic, Marko ; Weckx, Pieter ; Abbasi, Arash ; Kaczer, Ben ; Grasser, Tibor ; Waltl, Michael Extraction of Statistical Gate Oxide Parameters From Large MOSFET ArraysArtikel Article 2020
13Tselios, K. ; Stampfer, B. ; Michl, J. ; Ioannidis, E. ; Enichlmair, H. ; Waltl, M. Distribution of Step Heights of Electron and Hole Traps in SiON nMOS TransistorsKonferenzbeitrag Inproceedings 2020
14Knobloch, Theresia ; Michl, Jakob ; Waldhör, Dominic ; Illarionov, Yury ; Stampfer, Bernhard ; Grill, Alexander ; Zhou, R. ; Wu, P. ; Waltl, Michael ; Appenzeller, J ; Grasser, Tibor Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic TemperaturesKonferenzbeitrag Inproceedings 2020
15Waltl, Michael ; Stampfer, Bernhard ; Rzepa, Gerhard ; Kaczer, Ben ; Grasser, Tibor Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS TransistorsArtikel Article 2020
16Grasser, T. ; Kaczer, B. ; O'Sullivan, B. ; Rzepa, G. ; Stampfer, B. ; Waltl, M. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen ReleaseKonferenzbeitrag Inproceedings 2020
17Stampfer Bernhard - 2020 - Advanced electrical characterization of charge...pdf.jpgStampfer, Bernhard Advanced electrical characterization of charge trapping in MOS transistorsThesis Hochschulschrift 2020
18Stampfer, Bernhard ; Grill, Alexander ; Waltl, Michael Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise SignalsBuchbeitrag Book Contribution 2020
19Stampfer, B. ; Simicic, M. ; Weckx, P. ; Abbasi, A. ; Kaczer, B. ; Grasser, T. ; Waltl, M. Statistical Characterization of BTI and RTN using Integrated pMOS ArraysKonferenzbeitrag Inproceedings 2019
20Grill, A. ; Stampfer, B. ; Im, Ki-Sik ; Lee, J.-H. ; Ostermaier, C. ; Ceric, H. ; Waltl, M. ; Grasser, T. Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTsArtikel Article 2019