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Full name Familienname, Vorname
Lagger, Peter Willibald
 
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Own Publications Eigene Publikationen

Results 1-20 of 24 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Pobegen, G. ; Pogany, Dionyz ; Prechtl, G. ; Detzel, T. ; Häberlen, O. The role of defects on reliability aspects in GaN power devicesPräsentation Presentation2019
2Ostermaier, C. ; Lagger, P. ; Reiner, M. ; Pogany, D. Review of bias-temperature instabilities at the III-N/dielectric interfaceArtikel Article 2018
3Ostermaier, Clemens ; Lagger, Peter Willibald ; Reiner, Maria ; Koller, Christian ; Pobegen, Gregor ; Pogany, Dionyz Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defectsPräsentation Presentation2018
4Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Grill, Alexander ; Stradiotto, Roberta ; Pobegen, Gregor ; Grasser, Tibor ; Pietschnig, R ; Pogany, Dionyz Review of bias-temperature instabilities at the III-N/dielectric interfacePräsentation Presentation2017
5Ostermaier, C. ; Lagger, P. ; Prechtl, G. ; Grill, A. ; Grasser, T. ; Pogany, D. Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTsArtikel Article 2017
6Ostermaier, C ; Lagger, Peter Willibald ; Prechtl, G. ; Grill, Alexander ; Grasser, Tibor ; Pogany, Dionyz The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structuresPräsentation Presentation2015
7Grill, A. ; Rzepa, G. ; Lagger, P. ; Ostermaier, C. ; Ceric, Hajdin ; Grasser, T. Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTsKonferenzbeitrag Inproceedings 2015
8Capriotti, M. ; Lagger, P. ; Fleury, C. ; Oposich, M. ; Bethge, O. ; Ostermaier, C. ; Strasser, G. ; Pogany, D. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface statesArtikel Article 2015
9Lagger, Peter Willibald ; Donsa, Stefan ; Spreitzer, P. ; Pobegen, G. ; Reiner, Maria ; Naharashi, H. ; Mohamed, J. ; Mösslacher, M. ; Prechtl, G. ; Pogany, Dionyz ; Ostermaier, C Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heatersKonferenzbeitrag Inproceedings2015
10Reiner, Maria ; Lagger, Peter Willibald ; Prechtl, G. ; Steinschifter, Patrick ; Pietschnig, R ; Pogany, Dionyz ; Ostermaier, Clemens Modification of "Native" Surface Donor States in AlGaN/GaN MIS-HEMTs by Fluorination: Perspective for Defect EngineeringKonferenzbeitrag Inproceedings2015
11Lagger Peter Willibald - 2014 - Physics and characterization of the gate stack...pdf.jpgLagger, Peter Willibald Physics and characterization of the gate stack in gallium nitride based MIS-HEMTsThesis Hochschulschrift 2014
12Lagger, P. ; Steinschifter, P. ; Reiner, M. ; Stadtmüller, M. ; Denifl, G. ; Naumann, A. ; Müller, J. ; Wilde, L. ; Sundqvist, J. ; Pogany, D. ; Ostermaier, C. Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stressArtikel Article 2014
13Capriotti, M ; Lagger, Peter Willibald ; Fleury, Clement ; Stradiotto, Roberta ; Oposich, Martin ; Ostermaier, C ; Strasser, Gottfried ; Pogany, Dionyz Effect of III-N Barrier Resistance on CV Characteristics in GaN-based MOSHEMTs in Spill-Over RegimePräsentation Presentation2014
14Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Pobegen, Gregor ; Pogany, Dionyz Is PBTI at the dielectric/III‐N interface limited by interface traps?Präsentation Presentation2014
15Lagger, Peter Willibald ; Reiner, Maria ; Denifl, G ; Stadtmüller, Michael ; Pogany, Dionyz ; Ostermaier, C Understanding the Fundamental Limitations for the Improvement of Forward Gate Bias induced Vth Drift Stability of GaN based MIS-HEMTsPräsentation Presentation2014
16Lagger, Peter ; Reiner, Maria ; Pogany, Dionyz ; Ostermaier, Clemens Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery ExperimentsArtikel Article 2014
17Lagger, Peter Willibald ; Ostermaier, C ; Pogany, Dionyz Enhancement of Vth Drift for Repetitive Gate Stress Pulses due to Charge Feedback Effect in GaN MIS-HEMTsKonferenzbeitrag Inproceedings2014
18Lagger, Peter Willibald ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTsArtikel Article 2013
19Lagger, Peter Willibald ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTSKonferenzbeitrag Inproceedings2013
20Ostermaier, C ; Lagger, Peter Willibald ; Alomari, M ; Herfurth, Patrick ; Maier, D ; Alexewicz, Alexander ; di Forte Poisson, Marie-Antoinette ; Delage, S.L. ; Strasser, Gottfried ; Pogany, Dionyz ; Kohn, Erhard Reliability Investigation of the Degradation of the Surface Passivation of InAlN/GaN HEMTs using a Dual Gate StructurePräsentation Presentation2012