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Enichlmair, Hubert
 

Own Publications Eigene Publikationen

Results 1-12 of 12 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Waltl-2021-Microelectronics Reliability-vor.pdf.jpgWaltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of single-defects on the variability of CMOS inverter circuitsArticle Artikel Nov-2021
2Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021
3Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of Single-Defects on the Variability of CMOS Inverter CircuitsArtikel Article 2021
4Sharma, Prateek ; Tyaginov, Stanislav ; Jech, Markus ; Wimmer, Yannick ; Rudolf, Florian ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS DevicesArtikel Article 2016
5Sharma, Prateek ; Tyaginov, Stanislav ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor Predictive and efficient modeling of hot-carrier degradation in nLDMOS devicesKonferenzbeitrag Inproceedings2015
6Sharma, Prateek ; Tyaginov, Stanislav ; Wimmer, Yannick ; Rudolf, Florian ; Enichlmair, Hubert ; Park, Jong-Mun ; Ceric, Hajdin ; Grasser, Tibor A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion schemeKonferenzbeitrag Inproceedings2015
7Sharma, Prateek ; Jech, Markus ; Tyaginov, Stanislav ; Rudolf, Florian ; Rupp, Karl ; Enichlmair, Hubert ; Park, Jong-Mun ; Grasser, Tibor Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approachKonferenzbeitrag Inproceedings2015
8Starkov, Ivan ; Enichlmair, Hubert Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETsArtikel Article2013
9Starkov, Ivan ; Tyaginov, Stanislav ; Enichlmair, Hubert ; Park, Jong Mun ; Ceric, Hajdin ; Grasser, Tibor Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping MeasurementsArtikel Article2011
10Starkov, Ivan ; Ceric, Hajdin ; Tyaginov, Stanislav ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETsKonferenzbeitrag Inproceedings2011
11Tyaginov, Stanislav ; Starkov, Ivan ; Triebl, Oliver ; Ceric, Hajdin ; Grasser, Tibor ; Enichlmair, Hubert ; Park, Jong-Mun ; Jungemann, Christoph Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFETKonferenzbeitrag Inproceedings2011
12Tyaginov, Stanislav E. ; Starkov, Ivan ; Enichlmair, Hubert ; Park, Jong Mun ; Jungemann, Christoph ; Grasser, Tibor Physics-Based Hot-Carrier Degradation ModelingBuchbeitrag Book Contribution2011