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Record link: 
http://hdl.handle.net/20.500.12708/148279
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Title: 
The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices
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Citation: 
Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., & Grasser, T. (2016). The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices. Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014
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Publisher DOI: 
10.1016/j.sse.2015.08.014
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Publication Type: 
Article - Original Research Article
en
Authors: 
Sharma, Prateek 
Tyaginov, Stanislav 
Jech, Markus 
Wimmer, Yannick 
Rudolf, Florian 
Enichlmair, Hubert 
Park, Jong-Mun 
Ceric, Hajdin 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
Solid-State Electronics 
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ISSN: 
0038-1101
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Date (published): 
2016
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Number of Pages: 
7
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Condensed Matter Physics; Electronic, Optical and Magnetic Materials; Materials Chemistry
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Research Areas: 
Modelling and Simulation: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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