Title: Modelling and simulation of competitive crystal growth; theory, implementation and simulation of the Van der Drift model
Language: English
Authors: Schnitzer, Valentin 
Qualification level: Diploma
Keywords: Kompetitives Kristallwachstum; Van der Drift; Algorithmus; Simulation
Competitive Crystal Growth; Van der Drift; Algorithm; Simulation; Scaling of the Average In-Plane Crystal Size
Advisor: Langer, Erasmus
Assisting Advisor: Ceric, Hajdin
Referee: Rupp, Karl
Issue Date: 2010
Number of Pages: 59
Qualification level: Diploma
Abstract: 
Residual stresses determine the mechanical properties of metal films. To model these, numerous models based on continuum mechanics have been created which are applicable only for simplified situations. To investigate more sophisticated situations, crystal microstructure morphology simulations can be used as basis. However for this approach the results need to be in a format usable for the subsequent stress simulations. This is possible for the algorithm described in the course of this work, which is based on the Van der Drift model. The approach taken in the creation of the algorithm is flexible and allows for more general cases than previous algorithmic formulations of the model. The program implemented on basis of this algorithm is capable of exporting a mesh usable for the simulation of stress by the finite element method.
In addition to the algorithm and its implementations the scaling of the average in-plane crystal size and the a possible extension of the model are investigated. These theoretical results are then used for the simulations and for the analyse of their results.
URI: https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-41968
http://hdl.handle.net/20.500.12708/10267
Library ID: AC07809267
Organisation: E360 - Institut für Mikroelektronik 
Publication Type: Thesis
Hochschulschrift
Appears in Collections:Thesis

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