| Title: | Physical modeling of electron transport in strained silicon and silicon-germanium | Language: | English | Authors: | Smirnov, Sergey | Qualification level: | Doctoral | Advisor: | Kosina, Hans | Assisting Advisor: | Selberherr, Siegfried  |
Issue Date: | 2003 | Number of Pages: | 122 | Qualification level: | Doctoral | URI: | https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-11422 http://hdl.handle.net/20.500.12708/12174 |
Library ID: | AC04082352 | Organisation: | E360 - Institut für Mikroelektronik | Publication Type: | Thesis Hochschulschrift |
| Appears in Collections: | Thesis |
Files in this item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Physical modeling of electron transport in strained silicon and silicon-germanium.pdf | 6.72 MB | Adobe PDF |  View/Open |
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