Title: Physical modeling of electron transport in strained silicon and silicon-germanium
Language: English
Authors: Smirnov, Sergey 
Qualification level: Doctoral
Advisor: Kosina, Hans
Assisting Advisor: Selberherr, Siegfried 
Issue Date: 2003
Number of Pages: 122
Qualification level: Doctoral
URI: https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-11422
http://hdl.handle.net/20.500.12708/12174
Library ID: AC04082352
Organisation: E360 - Institut für Mikroelektronik 
Publication Type: Thesis
Hochschulschrift
Appears in Collections:Thesis

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