Record link: 
http://hdl.handle.net/20.500.12708/141854
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Title: 
Formation and Crystallographic Orientation of NiSi₂-Si Interfaces
en
Citation: 
Fuchs, F., Bilal Khan, M., Deb, D., Pohl, D., Schuster, J., Weber, W. M., Mühle, U., Löffler, M., Georgiev, Y. M., Erbe, A., & Gemming, S. (2020). Formation and Crystallographic Orientation of NiSi₂-Si Interfaces. Journal of Applied Physics, 128(8), 085301. https://doi.org/10.1063/1.5143122
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Publisher DOI: 
10.1063/1.5143122
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Fuchs, Florian 
Bilal Khan, Muhammad 
Deb, Dipjyoti 
Pohl, Darius 
Schuster, Jörg 
Weber, Walter M. 
Mühle, Uwe 
Löffler, Markus 
Georgiev, Yordan M. 
Erbe, Artur 
Gemming, Sibylle 
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Organisational Unit: 
E362-01 - Forschungsbereich Optoelektronische Materialien 
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Journal: 
Journal of Applied Physics 
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ISSN: 
0021-8979
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Date (published): 
2020
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Number of Pages: 
11
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Publisher: 
AMER INST PHYSICS
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Peer reviewed: 
Yes
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Keywords: 
General Physics and Astronomy
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Research Areas: 
Modelling and Simulation: 40%
Nanoelectronics: 40%
Surfaces and Interfaces: 20%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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