Glechner, T., Bahr, A. A. I., Hahn, R., Wojcik, T., Heller Martina, Kirnbauer, A., Ramm, J., Kolozsvári, S., Felfer, P., & Riedl-Tragenreif, H. (2022). High temperature oxidation resistance of physical vapor deposited Hf-Si-B2±z thin films. Corrosion Science, 205, Article 110413. https://doi.org/10.1016/j.corsci.2022.110413
APT; Hf-Si-B; Oxidation; PVD; Si diffusion; TEM; Ultra-high temperature
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Abstract:
Within physical vapor deposited Hf-Si-B2±z thin films, selective diffusion-driven oxidation of Si is identified to cause outstanding oxidation resistance at temperatures up to 1500 °C. After 60 h at 1200 °C, the initially 2.47 µm thin Hf0.20Si0.23B0.57 thin film exhibits a dense oxide scale of only 1.56 µm. The thermally induced decomposition of metastable Hf-Si-B2±z leads not only to the formation of Si precipitates within the remaining thin film (related to a non-homogenous Si distribution after the deposition) but also to pure Si layers on top and bottom of the Hf-Si-B2±z coatings next to the excellent adherend SiO2 based scales.
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Research facilities:
Röntgenzentrum Universitäre Service-Einrichtung für Transmissionselektronenmikroskopie
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Project title:
Oberflächentechnik von hochbeanspruchten Präzisionskomponenten: CDL-SEC (CDG Christian Doppler Forschungsgesellschaft)
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Project (external):
CLINT
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Project ID:
RC/SFB 1452
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Research Areas:
Special and Engineering Materials: 20% Materials Characterization: 50% Surfaces and Interfaces: 30%
CC BY 4.0
