Record link: 
http://hdl.handle.net/20.500.12708/142415
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Title: 
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
en
Citation: 
Sadi, T., Medina-Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., & Asenov, A. (2019). Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors. Materials, 12(1), 124. https://doi.org/10.3390/ma12010124
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Publisher DOI: 
10.3390/ma12010124
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Sadi, Toufik 
Medina-Bailon, Christina 
Nedjalkov, Mihail 
Lee, Jaehyun 
Badami, Oves 
Berrada, Salim 
Carillo-Nunez, Hamilton 
Georgiev, Vihar 
Selberherr, Siegfried 
Asenov, Asen 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
Materials 
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ISSN: 
1996-1944
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Date (published): 
2019
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Number of Pages: 
11
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Publisher: 
MDPI
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Peer reviewed: 
Yes
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Keywords: 
General Materials Science
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Research Areas: 
Nanoelectronics: 50%
Quantum Modelling and Simulation: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Nanotechnologie
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