Record link: 
http://hdl.handle.net/20.500.12708/142896
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Title: 
Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects
en
Citation: 
Jing, X., Illarionov, Y., Yalon, E., Zhou, P., Grasser, T., Shi, Y., & Lanza, M. (2019). Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects. Advanced Functional Materials, 30(18), 1901971. https://doi.org/10.1002/adfm.201901971
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Publisher DOI: 
10.1002/adfm.201901971
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Jing, Xu 
Illarionov, Yury 
Yalon, Eilam 
Zhou, Peng 
Grasser, Tibor 
Shi, Yuanyuan 
Lanza, Mario 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
Advanced Functional Materials 
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ISSN: 
1616-301X
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Date (published): 
2019
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Number of Pages: 
21
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Publisher: 
WILEY-V C H VERLAG GMBH
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Peer reviewed: 
Yes
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Keywords: 
Condensed Matter Physics; Electronic, Optical and Magnetic Materials; Biomaterials; Electrochemistry
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Research Areas: 
Nanoelectronics: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Nanotechnologie
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