Record link: 
http://hdl.handle.net/20.500.12708/148716
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Title: 
Role of hydrogen in volatile behaviour of defects in SiO₂-based electronic devices
en
Citation: 
Wimmer, Y., El-Sayed, A.-M., Gös, W., Grasser, T., & Shluger, A. L. (2016). Role of hydrogen in volatile behaviour of defects in SiO₂-based electronic devices. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 472(2190). https://doi.org/10.1098/rspa.2016.0009
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Publisher DOI: 
10.1098/rspa.2016.0009
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Publication Type: 
Artikel - Original Research Article
de
 
Article - Original Research Article
en
Language: 
English
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Authors: 
Wimmer, Yannick 
El-Sayed, Al-Moatasem 
Gös, Wolfgang 
Grasser, Tibor 
Shluger, Alexander L. 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 
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ISSN: 
1364-5021
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Date (published): 
Jun-2016
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Number of Pages: 
23
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Publisher: 
ROYAL SOC
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Peer reviewed: 
Yes
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Keywords: 
General Mathematics; General Engineering; General Physics and Astronomy
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Research Areas: 
Modelling and Simulation: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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