Zhong, Z., Wallerberger, M., Tomczak, J. M., Taranto, C., Parragh, N., Toschi, A., Sangiovanni, G., & Held, K. (2015). Electronics with Correlated Oxides: SrVO₃/SrTiO₃ as a Mott Transistor. Physical Review Letters, 114(246401). https://doi.org/10.1103/physrevlett.114.246401
E138-01 - Forschungsbereich Computational Materials Science E138-02 - Forschungsbereich Correlations: Theory and Experiments
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Journal:
Physical Review Letters
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ISSN:
0031-9007
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Date (published):
19-Jun-2015
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Number of Pages:
5
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Publisher:
AMER PHYSICAL SOC
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Peer reviewed:
Yes
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Keywords:
General Physics and Astronomy
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Abstract:
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO3 on a SrTiO3 substrate are insulating: the thin film geometry lifts the orbital degeneracy, which in turn triggers a first-order Mott-Hubbard transition. Two layers of SrVO3 are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also switch between metal (ON) and insulator (OFF), so that a transistor with ideal ON-OFF switching properties is realized.
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Research Areas:
Surfaces and Interfaces: 30% Computational Materials Science: 70%
