Record link: 
http://hdl.handle.net/20.500.12708/151477
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Title: 
Electronics with Correlated Oxides: SrVO₃/SrTiO₃ as a Mott Transistor
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Citation: 
Zhong, Z., Wallerberger, M., Tomczak, J. M., Taranto, C., Parragh, N., Toschi, A., Sangiovanni, G., & Held, K. (2015). Electronics with Correlated Oxides: SrVO₃/SrTiO₃ as a Mott Transistor. Physical Review Letters, 114(246401). https://doi.org/10.1103/physrevlett.114.246401
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Publisher DOI: 
10.1103/physrevlett.114.246401
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Zhong, Zhicheng 
Wallerberger, Markus 
Tomczak, Jan M. 
Taranto, Ciro 
Parragh, Nicolaus 
Toschi, Alessandro 
Sangiovanni, Giorgio 
Held, Karsten 
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Organisational Unit: 
E138-01 - Forschungsbereich Computational Materials Science 
E138-02 - Forschungsbereich Correlations: Theory and Experiments 
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Journal: 
Physical Review Letters 
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ISSN: 
0031-9007
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Date (published): 
19-Jun-2015
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Number of Pages: 
5
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Publisher: 
AMER PHYSICAL SOC
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Peer reviewed: 
Yes
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Keywords: 
General Physics and Astronomy
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Abstract: 
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO3 on a SrTiO3 substrate are insulating: the thin film geometry lifts the orbital degeneracy, which in turn triggers a first-order Mott-Hubbard transition. Two layers of SrVO3 are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also switch between metal (ON) and insulator (OFF), so that a transistor with ideal ON-OFF switching properties is realized.
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Research Areas: 
Surfaces and Interfaces: 30%
Computational Materials Science: 70%
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Science Branch: 
Physik, Astronomie
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