Record link: 
http://hdl.handle.net/20.500.12708/153022
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Title: 
Programmable negative differential Resistance in Ge Nanowire Transistors
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Citation: 
Sistani, M., Behrle, R., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2022, September 11). Programmable negative differential Resistance in Ge Nanowire Transistors [Conference Presentation]. 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria.
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Publication Type: 
Presentation - Conference Presentation
en
Language: 
English
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Authors: 
Sistani, Masiar 
Behrle, Raphael 
Luong, Minh Anh 
den Hertog, Martien I. 
Lugstein, Alois 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen 
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Date (published): 
11-Sep-2022
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Event name: 
19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19) 
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Event date: 
10-Sep-2022 - 16-Sep-2022
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Event place: 
Mondsee, Austria
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Keywords: 
germanium; transistors; Nanowire
en
Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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