Metal-semiconductor transition in NiFe₂O₄ nanoparticles due to reverse cationic distribution by impedance spectroscopy

Abstract

Metal-semiconductor transition in NiFe2O4 nanoparticles due to reverse cationic distribution by impedance spectroscopy

M. Younas,1 M. Nadeem,1,a) M. Atif,2 and R. Grossinger2

1EMMG, Physics Division, PINSTECH, P.O. Nilore, Islamabad, Pakistan 2Institute of Solid State Physics, Technical University of Vienna, Wiedner Hauptstrasse 8-10, A-1040 Vienna, Austria (Received 1 December 2010; accepted 24 March 2011; published online 6 May 2011)

We have investigated the magnetic and electrical response of the sol-gel synthesized NiFe2O4 nanoparticles. Changes in the impedance plane plots with temperature have been discussed and correlated to the microstructure of the material. Thermally activated hopping carriers between Fe3þ-Fe2þ and Ni2þ-Ni3þ ions have been determined for a decrease in the resistance of the sample and a change in the conduction mechanism around 318 K. The mixed spinel structure and broken exchange bonds due to small size effects are due to the canted spin structure at the surface of the nanoparticles. The magnetization is found to be influenced by the surface spin canting and anisotropy. We have established the semiconducting to metallic transition (SMT) temperature to be around 358 K in terms of localized and delocalized eg electrons along with a transition from less conductive [Fe3þ-O2 -Fe3þ] and [Ni2þ-O2 -Ni2þ] linkage to more conductive [Fe3þ-Fe2þ] and [Ni2þ-Ni3þ] linkage at the octahedral B site. A decrease in the dielectric constant with temperature has been discussed in terms of the depletion of space charge layers due to the repulsion of delocalized eg electrons from the grain boundary planes. The anomalies in tangent loss and conductivity data around 358 K are