Record link: 
http://hdl.handle.net/20.500.12708/166180
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Title: 
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
en
Citation: 
Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquière, C., DeJaeger, J.-C., Čičo, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2009). Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation. IEEE Electron Device Letters, 30(10), 1030–1032. https://doi.org/10.1109/led.2009.2029532
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Publisher DOI: 
10.1109/led.2009.2029532
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Ostermaier, Clemens 
Pozzovivo, Gianmauro 
Carlin, Jean-François 
Basnar, Bernhard 
Schrenk, Werner 
Douvry, Yannick 
Gaquière, Christophe 
DeJaeger, Jean-Claude 
Čičo, Karol 
Fröhlich, Karol 
Gonschorek, Marcus 
Grandjean, Nicolas 
Strasser, Gottfried 
Pogany, Dionyz 
Kuzmik, Jan 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Journal: 
IEEE Electron Device Letters 
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ISSN: 
0741-3106
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Date (published): 
2009
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Number of Pages: 
3
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Publisher: 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Research Areas: 
Structure-Property Relationship: 10%
Special and Engineering Materials: 10%
Materials Characterization: 10%
Surfaces and Interfaces: 10%
Design and Engineering of Quantum Systems: 10%
Nanoelectronics: 40%
Photonics: 10%
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
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