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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Reggiani, Susanna ; Gnani, Elena ; Rudan, Massimo ; Baccarani, Giorgio ; Bychikhin, Sergey ; Kuzmik, Jan ; Pogany, Dionyz ; Gornik, Erich ; Denison, Marie ; Jensen, Nils ; Groos, Gerhard ; Stecher, Matthias | A New Numerical and Experimental Analysis Tool for ESD Devices by Means of the Transient Interferometric Technique | Artikel Article | 2005 |
| 2 | | Martens, K. ; Kaczer, B. ; Grasser, T. ; De Jaeger, B. ; Meuris, M. ; Maes, H. E. ; Groeseneken, G. | Applicability of Charge Pumping on Germanium MOSFETs | Artikel Article | 2008 |
| 3 | | Makarov, Alexander ; Kaczer, Ben ; Chasin, Adrian ; Vandemaele, Michiel ; Bury, Erik ; Jech, Markus ; Grill, Alexander ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Grasser, Tibor ; Linten, Dimitri ; Tyaginov, Stanislav | Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach | Artikel Article  | 2019 |
| 4 | | Neophytou, Neophytos ; Kosina, Hans | Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors | Artikel Article | 2012 |
| 5 | | Podgaynaya, Alevtina ; Rudolf, R ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias | Experimental and Theoretical Analysis of the Electrical SOA of Rugged p-Channel LDMOS | Artikel Article | 2010 |
| 6 | | Kaczer, Ben ; Franco, Jacopo ; Roussel, Philippe J. ; Groeseneken, Guido ; Chiarella, Thomas ; Horiguchi, Naoto ; Grasser, Tibor | Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs | Artikel Article | 2015 |
| 7 | | Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Makarov, Alexander ; Vexler, Mikhail I. ; Kaczer, Ben ; Grasser, Tibor | Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach | Artikel Article | 2017 |
| 8 | | Franco, J. ; Kaczer, Ben ; Toledano-Luque, M. ; Bukhori, Muhammad Faiz ; Roussel, Ph. J. ; Grasser, Tibor ; Asenov, A ; Groeseneken, G. | Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs | Artikel Article | 2012 |
| 9 | | Illarionov, Yury Yu. ; Smithe, Kirby K. H. ; Waltl, Michael ; Knobloch, Theresia ; Pop, Eric ; Grasser, Tibor | Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation | Artikel Article | 2017 |
| 10 | | Steindl, Bernhard ; Enne, Reinhard ; Schidl, Stefan ; Zimmermann, Horst | Linear Mode Avalanche Photodiode With High Responsivity Integrated in High-Voltage CMOS | Artikel Article | 2014 |
| 11 | | Medina-Bailon, Christina ; Sadi, Toufik ; Nedjalkov, Mihail ; Carrillo-Nuñez, Hamilton ; Lee, Jaehyun ; Badami, Oves ; Georgiev, Vihar ; Selberherr, Siegfried ; Asenov, Asen | Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism | Artikel Article | Oct-2019 |
| 12 | | Pobegen, Gregor ; Tyaginov, Stanislav ; Nelhiebel, Michael ; Grasser, Tibor | Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation | Artikel Article | 2013 |
| 13 |  | Wind, Lukas ; Maierhofer, Moritz ; Fuchsberger, Andreas ; Sistani, Masiar ; Weber, Walter M. | Realization of a complementary full adder based on reconfigurable transistors | Article Artikel   | Apr-2024 |
| 14 | | Jurkovic, M. ; Gregusova, D. ; Palankovski, V. ; Hascik, Stefan ; Blaho, M. ; Cico, K. ; Frohlich, K. ; Carlin, J. ; Grandjean, N. ; Kuzmik, J. | Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region | Artikel Article | 2013 |
| 15 | | Kaczer, B ; Roussel, Ph J ; Grasser, T ; Groeseneken, G | Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI | Artikel Article | 2010 |
| 16 | | Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, Adrian ; Grill, Alexander ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Grasser, Tibor ; Linten, Dimitri ; Tyaginov, Stanislav | Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs | Artikel Article | 2019 |
| 17 | | Khalil, N. ; Faricelli, J. ; Bell, D. ; Selberherr, S. | The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling | Artikel Article | 1995 |
| 18 | | Simon, Maik ; Liang, B. ; Fischer, D. ; Knaut, M. ; Tahn, A. ; Mikolajick, T. ; Weber, W. M. | Top-down fabricated reconfigurable FET with two symmetric and high-current on-states | Artikel Article | 2020 |
| 19 | | Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Carlin, Jean-François ; Basnar, Bernhard ; Schrenk, Werner ; Douvry, Yannick ; Gaquière, Christophe ; DeJaeger, Jean-Claude ; Čičo, Karol ; Fröhlich, Karol ; Gonschorek, Marcus ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz ; Kuzmik, Jan | Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation | Artikel Article | 2009 |
| 20 | | Tyaginov, Stanislav ; Jech, Markus ; Franco, Jacopo ; Sharma, Prateek ; Kaczer, Ben ; Grasser, Tibor | Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs | Artikel Article | 2016 |
