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Record link: 
http://hdl.handle.net/20.500.12708/174438
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Title: 
The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling
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Citation: 
Khalil, N., Faricelli, J., Bell, D., & Selberherr, S. (1995). The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling. IEEE Electron Device Letters, 16(1), 17–19. https://doi.org/10.1109/55.363213
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Publisher DOI: 
10.1109/55.363213
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Publication Type: 
Article - Original Research Article
en
Authors: 
Khalil, N. 
Faricelli, J. 
Bell, D. 
Selberherr, S. 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
IEEE Electron Device Letters 
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ISSN: 
0741-3106
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Date (published): 
1995
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Number of Pages: 
3
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Publisher: 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
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