Record link: 
http://hdl.handle.net/20.500.12708/168364
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Title: 
Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires
en
Citation: 
Lancaster, S., Andrews, A. M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Groiss, H., Schrenk, W., Strasser, G., & Detz, H. (2019). Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires. Physica Status Solidi (b) – Basic Solid State Physics, 256(5), 1800368. https://doi.org/10.1002/pssb.201800368
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Publisher DOI: 
10.1002/pssb.201800368
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Publication Type: 
Artikel - Original Research Article
de
 
Article - Original Research Article
en
Language: 
English
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Authors: 
Lancaster, Suzanne 
Andrews, Aaron Maxwell 
Stöger-Pollach, Michael 
Steiger-Thirsfeld, Andreas 
Groiss, Heiko 
Schrenk, Werner 
Strasser, Gottfried 
Detz, Hermann 
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Organisational Unit: 
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie 
E362 - Institut für Festkörperelektronik 
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Journal: 
physica status solidi (b) – basic solid state physics 
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ISSN: 
0370-1972
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Date (published): 
2019
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Number of Pages: 
5
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Peer reviewed: 
Yes
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Keywords: 
Condensed Matter Physics; Electronic, Optical and Magnetic Materials
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Research Areas: 
Materials Characterization: 30%
Nanoelectronics: 20%
Photonics: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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