Antimony Induced Crystallization of Amorphous Silicon

Abstract

Antimony Induced Crystallization of Amorphous Silicon

Y. Wang a, H.Z. Li b, C.N. Yu a, G.M. Wu c, I. Gordon d, P. Schattschneider e and O. Van Der Biest f

a School of Science, Beijing Institute of Petro-Chemical Technology, Beijing 102617, China b Center of Engineering Education, Beijing Institute of Petro-Chemical Technology, Beijing 102617, China c School of Materials Science and Engineering, Beijing Institute of Petro-Chemical Technology, Beijing 102617, China d Development of Technique, Interuniversity Micro Electronics Center, B-3001 Leuven, Belgium e School of Materials Science and Engineering, Technische Universität Wien, A-1040 Wien, Austria f School of Materials Science and Engineering, Katholieke Universiteit Leuven, B-3001 Heverlee (Leuven), Belgium

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE (molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.