Record link: 
http://hdl.handle.net/20.500.12708/174393
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Title: 
Analysis of Breakdown Phenomena in MOSFET's
en
Citation: 
Schütz, A., Selberherr, S., & Pötzl, H. (1982). Analysis of Breakdown Phenomena in MOSFET’s. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1(2), 77–85. https://doi.org/10.1109/tcad.1982.1269997
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Publisher DOI: 
10.1109/tcad.1982.1269997
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Schütz, A. 
Selberherr, Siegfried 
Pötzl, Hans 
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Organisational Unit: 
E366 - Institut für Sensor- und Aktuatorsysteme 
E360 - Institut für Mikroelektronik 
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Journal: 
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 
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ISSN: 
0278-0070
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Date (published): 
1982
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Number of Pages: 
9
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Software; Computer Graphics and Computer-Aided Design
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
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