Record link: 
http://hdl.handle.net/20.500.12708/187463
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Title: 
Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts
en
Citation: 
Fuchsberger, A., Wind, L., Sistani, M., Behrle, R., Nazzari, D., Aberl, J., Prado Navarrete, E., Vukŭsić, L., Brehm, M., Schweizer, P., Vogl, L., Maeder, X., & Weber, W. M. (2023). Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts. Advanced Electronic Materials, Article 2201259. https://doi.org/10.1002/aelm.202201259
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Publisher DOI: 
10.1002/aelm.202201259
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Fuchsberger, Andreas 
Wind, Lukas 
Sistani, Masiar 
Behrle, Raphael 
Nazzari, Daniele 
Aberl, Johannes 
Prado Navarrete, Enrique 
Vukŭsić, Lada 
Brehm, Moritz 
Schweizer, Peter 
Vogl, Lilian 
Maeder, Xavier 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Journal: 
Advanced Electronic Materials 
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ISSN: 
2199-160X
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Date (published): 
2023
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Number of Pages: 
10
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Publisher: 
WILEY
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Peer reviewed: 
Yes
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Keywords: 
Field-Effect; Transistor; SiGe; Crystalline
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Research Areas: 
Surfaces and Interfaces: 30%
Logic and Computation: 30%
Nanoelectronics: 40%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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