Roemer Christian, Darbandy, G., Schwarz Mike, Trommer, J., Heinzig, A., Mikolajick, T., Weber, W. M., Iniguez, B., & Kloes, A. (2021). Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors. In 2021 IEEE Latin America Electron Devices Conference (LAEDC) (pp. 1–4). IEEE. https://doi.org/10.1109/LAEDC51812.2021.9437954
2021 IEEE Latin America Electron Devices Conference (LAEDC)
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ISBN:
978-1-6654-1510-1
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Date (published):
19-Apr-2021
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Event name:
Latin America Electron Devices Conference 2021
en
Event date:
19-Apr-2021 - 21-Apr-2021
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Event place:
Mexiko, Mexico
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Number of Pages:
4
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Publisher:
IEEE, Piscataway
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Keywords:
closed-form; compact modeling; field emission; RFET; SBFET; Schottky barrier; thermionic emission; tunneling current
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Abstract:
This paper presents a closed-form, physics-based compact model which is used to calculate the DC characteristics of double gate Schottky barrier field-effect transistors (SBFETs) and reconfigurable field-effect transistors (RFETs) therefore, the model calculates the drain current which consists of field emission through the Schottky barrier and thermionic emission over the barrier. In order to validate the model, this paper shows results for the calculated current in SBFETs and RFETs compared to transfer characteristics of simulated devices and measurements, which show a good agreement.
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Research Areas:
Logic and Computation: 80% Computational Materials Science: 20%