Record link: 
http://hdl.handle.net/20.500.12708/187468
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Title: 
Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors
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Citation: 
Roemer Christian, Darbandy, G., Schwarz Mike, Trommer, J., Heinzig, A., Mikolajick, T., Weber, W. M., Iniguez, B., & Kloes, A. (2021). Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors. In 2021 IEEE Latin America Electron Devices Conference (LAEDC) (pp. 1–4). IEEE. https://doi.org/10.1109/LAEDC51812.2021.9437954
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Publisher DOI: 
10.1109/LAEDC51812.2021.9437954
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Roemer Christian 
Darbandy, Ghader 
Schwarz Mike 
Trommer, Jens 
Heinzig, Andre 
Mikolajick, Thomas 
Weber, Walter M. 
Iniguez, Benjamin 
Kloes, Alexander 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Published in: 
2021 IEEE Latin America Electron Devices Conference (LAEDC) 
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ISBN: 
978-1-6654-1510-1
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Date (published): 
19-Apr-2021
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Event name: 
Latin America Electron Devices Conference 2021 
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Event date: 
19-Apr-2021 - 21-Apr-2021
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Event place: 
Mexiko, Mexico
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Number of Pages: 
4
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Publisher: 
IEEE, Piscataway
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Keywords: 
closed-form; compact modeling; field emission; RFET; SBFET; Schottky barrier; thermionic emission; tunneling current
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Abstract: 
This paper presents a closed-form, physics-based compact model which is used to calculate the DC characteristics of double gate Schottky barrier field-effect transistors (SBFETs) and reconfigurable field-effect transistors (RFETs) therefore, the model calculates the drain current which consists of field emission through the Schottky barrier and thermionic emission over the barrier. In order to validate the model, this paper shows results for the calculated current in SBFETs and RFETs compared to transfer characteristics of simulated devices and measurements, which show a good agreement.
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Research Areas: 
Logic and Computation: 80%
Computational Materials Science: 20%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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