Piacentini, A., Polyushkin, D., Uzlu, B., Grundmann, A., Heuken, D. M., Kalisch, H., Vescan, A., Müller, T., Lemme, M. C., & Neumaier, D. (2023). Flexible CMOS electronics based on 2D p-type WSe₂ and n-type MoS₂. In 2023 Device Research Conference (DRC) (pp. 1–2). IEEE. https://doi.org/10.1109/DRC58590.2023.10187050
Power demand; Field effect transistors; Polyimides; Inverters; Power dissipation
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Abstract:
Flexible electronics have been emerging in the last years for a wide variety of applications. In this scenario, transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (MOS2) and tungsten diselenide (WSe2), have captured increased attention because of their complementary transport properties, and their excellent mechanical flexibility [1]. In particular, MOS2 has shown good electron transport, while WSe2 has predominantly shown hole transport [2]. This enables complementary metal-oxide semiconductor (CMOS) technology with its inherent advantages over its unipolar counterpart, i.e., low power dissipation and large noise immunity. Here, we demonstrate n-type MOS2 and p-type WSe2 field effect transistors (FETs) and combine them to form CMOS inverters on a flexible polyimide (PI) substrate.
