Moll, P., Pfusterschmied, G., & Schmid, U. (2023). Robust Polycrystalline 3C-Sic-on-Si Heterostructures with Low CTE Mismatch up to 900 °C for MEMS. In 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 590–593). IEEE. https://doi.org/10.1109/MEMS49605.2023.10052144
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)
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ISBN:
9781665493086
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Volume:
2023-January
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Date (published):
Jan-2023
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Event name:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)
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Event date:
15-Jan-2023 - 19-Jan-2023
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Event place:
Munich, Germany
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Number of Pages:
4
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Publisher:
IEEE
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Peer reviewed:
Yes
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Keywords:
3C-SiC; CTE mismatch; LPCVD; thermal stress
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Abstract:
In this paper we present for the first time polycrystalline cubic silicon carbide on monocrystalline silicon (3C-SiC-on-Si) heterostructures with very low coefficient of thermal expansion (CTE) mismatch at temperatures up to 900 °C. The use of different gas flow rates with alternating supply deposition (ASD) in a low-pressure chemical vapor deposition (LPCVD) system allows to tailor the CTE of the 3C-SiC thin films, resulting in thermal stress levels as low as 175 MPa at 900 °C (∼300 MPa intrinsic stress at room temperature). This achievement unlocks robust 3C-SiC/Si interfaces for high temperature micro electromechanical systems (MEMS) applications by overcoming the well-known CTE mismatch of ∼9 % between Si and 3C-SiC.
