Record link: 
http://hdl.handle.net/20.500.12708/192881
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Title: 
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices
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Citation: 
Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., & Selberherr, S. (2023). Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96). https://doi.org/10.1109/ESSDERC59256.2023.10268508
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Publisher DOI: 
10.1109/ESSDERC59256.2023.10268508
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Sverdlov, Viktor 
Bendra, Mario 
Pruckner, Bernhard 
Fiorentini, Simone 
Goes, Wolfgang 
Selberherr, Siegfried 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) 
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ISBN: 
979-8-3503-0423-7
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Date (published): 
Sep-2023
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Event name: 
IEEE European Solid-State Device Research Conference (ESSDERC) 
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Event date: 
11-Sep-2023 - 14-Sep-2023
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Event place: 
Lisbon, Portugal
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Number of Pages: 
4
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Peer reviewed: 
Yes
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Keywords: 
Spin and charge drift-diffusion; spin-transfer torque; magnetic tunnel junctions; STT-MRAM; composite free layer; shape-induced magnetic anisotropy; double-spin MTJ
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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