Modeling Advanced Spintronic Based Magnetoresistive Memory

Abstract

Spintronic based magnetoresistive memory shows an increasing potential in replacing conventional charge based memory for stand-alone and embedded applications. Accurate simulation tools, providing a comprehensive evaluation of the spin torques and magnetization dynamics in structures with several ferromagnetic and nonmagnetic metal layers separated by tunnel barriers, are required to design advanced magnetoresitive memory cells. We demonstrate that the coupled spin and charge drift-diffusion transport approach, extended to describe magnetic tunnel junctions and augmented with temperature, is suitable to describe complex magnetoresitive memory cells with two reference layers controlled by spin torques.