Record link: 
http://hdl.handle.net/20.500.12708/193502
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Title: 
Charge and Spin Transport in Semiconductor Devices
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Citation: 
Sverdlov, V., & Selberherr, S. (2023). Charge and Spin Transport in Semiconductor Devices. In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4). https://doi.org/10.1109/ASICON58565.2023.10396645
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Publisher DOI: 
10.1109/ASICON58565.2023.10396645
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Sverdlov, Viktor 
Selberherr, Siegfried 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
2023 IEEE 15th International Conference on ASIC (ASICON) 
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ISBN: 
979-8-3503-1298-0
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Date (published): 
24-Oct-2023
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Event name: 
IEEE International Conference on ASIC (ASICON) 
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Event date: 
24-Oct-2023 - 27-Oct-2023
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Event place: 
Nanjing, China
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Number of Pages: 
4
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Peer reviewed: 
Yes
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Keywords: 
charge and spin currents; TCAD; digital spintronics; SpinFET; SpinMOSFET; STT-MRAM; SOT-MRAM
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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