Record link: 
http://hdl.handle.net/20.500.12708/193517
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Title: 
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory
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Citation: 
Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., & Selberherr, S. (2023). Modeling of Ultra-Scaled Magnetoresistive Random Access Memory. In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT ’2023) (pp. 28–30).
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Bendra, Mario 
Lacerda de Orio, Roberto 
Goes, Wolfgang 
Sverdlov, Viktor 
Selberherr, Siegfried 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023) 
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ISBN: 
978-84-09-53748-8
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Date (published): 
Sep-2023
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Event name: 
5th International Conference on Microelectronic Devices and Technologies (MicDAT 2023) 
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Event date: 
20-Sep-2023 - 22-Sep-2023
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Event place: 
Funchal (Madeira Island), Portugal
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Number of Pages: 
3
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Peer reviewed: 
Yes
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Keywords: 
Magnetoresistive Random Access Memory; Composite Free Layer; Multi-Level Memory Operation; Back-Hopping Effect; Ultra-Scaled MRAM
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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