Record link: 
http://hdl.handle.net/20.500.12708/193762
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Title: 
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics
en
Citation: 
Bendra, M., Jorstad, N. P., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics. In IEDM 2023 Special MRAM poster session. International Electron Devices Meeting (IEDM 2023), San Francisco, United States of America (the). http://hdl.handle.net/20.500.12708/193762
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Bendra, Mario 
Jorstad, Nils Petter 
Lacerda de Orio, Roberto 
Selberherr, Siegfried 
Goes, Wolfgang 
Sverdlov, Viktor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
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Published in: 
IEDM 2023 Special MRAM poster session 
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Date (published): 
9-Dec-2023
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Event name: 
International Electron Devices Meeting (IEDM 2023) 
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Event date: 
9-Dec-2023 - 13-Dec-2023
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Event place: 
San Francisco, United States of America (the)
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Number of Pages: 
2
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Peer reviewed: 
Yes
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Keywords: 
Multi-Tunnel Barrier MRAM Cells; Cyclic Switching in MRAM; Innovative Applications of Parasitic Effects
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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