Record link: 
http://hdl.handle.net/20.500.12708/193762
-
Title: 
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics
en
Citation: 
Bendra, M., Jorstad, N. P., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2023). Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics. In IEDM 2023 Special MRAM poster session. International Electron Devices Meeting (IEDM 2023), San Francisco, United States of America (the). http://hdl.handle.net/20.500.12708/193762
-
Publication Type: 
Inproceedings - Abstract Book Contribution
en
Language: 
English
-
Authors: 
Bendra, Mario 
Jorstad, Nils Petter 
Lacerda de Orio, Roberto 
Selberherr, Siegfried 
Goes, Wolfgang 
Sverdlov, Viktor 
-
Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
-
Published in: 
IEDM 2023 Special MRAM poster session 
-
Date (published): 
9-Dec-2023
-
Event name: 
International Electron Devices Meeting (IEDM 2023) 
en
Event date: 
9-Dec-2023 - 13-Dec-2023
-
Event place: 
San Francisco, United States of America (the)
-
Number of Pages: 
2
-
Peer reviewed: 
Yes
-
Keywords: 
Multi-Tunnel Barrier MRAM Cells; Cyclic Switching in MRAM; Innovative Applications of Parasitic Effects
en
Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
-
Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
-
Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
-
Appears in Collections:
Conference Paper

Show full item record

Page view(s)

76
checked on Feb 10, 2024

Download(s)

8
checked on Feb 10, 2024

Google ScholarTM

Check