Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., & Sverdlov, V. (2022). Finite Element Method for MRAM Switching Simulations. WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64
Finite element method; Landau- Lifshitz-Gilbert equation; spin and charge drift-diffusion; STT-MRAM
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Abstract:
The development of reliable simulation tools provides a valuable help in the design of modern
MRAMdevices. Thanks to its versatility in the choice of meshes and discretization, the finite element method
is a useful framework for the numerical solution of the magnetization dynamics. We review a finite element
implementation of both the Landau-Lifshitz-Gilbert equation and the spin and charge drift-diffusion formalism
in a solver employing open source software. The presented approach is successfully applied to emerging multi-
layered MRAM cells.
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Project title:
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells)
