Record link: 
http://hdl.handle.net/20.500.12708/196185
-
Title: 
High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits
en
Citation: 
Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. ECS Transactions, 111(1), 219–228. https://doi.org/10.1149/11101.0219ecst
-
Publisher DOI: 
10.1149/11101.0219ecst
-
Publication Type: 
Article - Review Article
en
Language: 
English
-
Authors: 
Knobloch, Theresia 
Selberherr, Siegfried 
Grasser, Tibor 
-
Organisational Unit: 
E360 - Institut für Mikroelektronik 
-
Journal: 
ECS Transactions 
-
ISSN: 
1938-5862
-
Date (published): 
19-May-2023
-
Number of Pages: 
10
-
Publisher: 
The Electrochemical Society
-
Peer reviewed: 
Yes
-
Keywords: 
2D materials; VLSI circuits; FETs; nanosheet
en
Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
Voll gekoppelte Fluid-Struktur-Kontakt-Simulationen für den Spanabtrag: 439919057 (Deutsche Forschungsgemeinschaft e.V) 
-
Research Areas: 
Nanoelectronics: 90%
Modeling and Simulation: 10%
-
Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
-
Appears in Collections:
Article

Show full item record

Page view(s)

51
checked on Mar 30, 2024

Download(s)

3
checked on Mar 30, 2024

Google ScholarTM

Check