Fluoride für die nächste Generation von 2D Nanoelektronik


Project Acronym Projekt Kurzbezeichnung
F2GO
 
Project Title (de) Projekttitel (de)
Fluoride für die nächste Generation von 2D Nanoelektronik
 
Project Title (en) Projekttitel (en)
Fluorides for 2D Next-Generation Nanoelectronics
 
Consortium Coordinator Koordinator des Konsortiums
 
Principal Investigator Projektleiter_in
 
Funder/Funding Agency Fördergeber
European Commission
Grant number Förderkennnummer
101021351
 

Publications

Results 1-5 of 5 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Mounir, Ahmed ; Iniguez, Benjamin ; Lime, Francois ; Kloes, Alexander ; Knobloch, Theresia ; Grasser, Tibor Compact I-V Model for back-gated and double-gated TMD FETsArticle Artikel Sep-2023
2Ravichandran, Harikrishnan ; Knobloch, Theresia ; Pannone, Andrew ; Karl, Alexander ; Stampfer, Bernhard ; Waldhör, Dominic ; Zheng, Yikai ; Sakib, Najam ; Karim Sadaf, Muhatsim ; Pendurthi, Rahul ; Torsi, Riccardo ; Robinson, Joshua A. ; Grasser, Tibor ; Das, Saptarshi Observation of Rich Defect Dynamics in Monolayer MoS₂Article Artikel 25-Jul-2023
3Knobloch, Theresia ; Grasser, Tibor Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional MaterialsInproceedings Konferenzbeitrag 28-May-2023
4Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI CircuitsInproceedings Konferenzbeitrag28-May-2023
5Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI CircuitsArticle Artikel 19-May-2023