Fluoride für die nächste Generation von 2D Nanoelektronik


Project Acronym Projekt Kurzbezeichnung
F2GO
 
Project Title (de) Projekttitel (de)
Fluoride für die nächste Generation von 2D Nanoelektronik
 
Project Title (en) Projekttitel (en)
Fluorides for 2D Next-Generation Nanoelectronics
 
Consortium Coordinator Koordinator des Konsortiums
 
Principal Investigator Projektleiter_in
 
Funder/Funding Agency Fördergeber
European Commission
Grant number Förderkennnummer
101021351
 

Results 1-20 of 21 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ghosh, Rittik ; Provias, Alexandros ; Karl, Alexander ; Chaudhuri, Rajarshi Roy ; Waldhör, Dominic ; Knobloch, Theresia ; Wilhelmer, Christoph ; Grasser, Tibor Unveiling Fast Interface Trap Dynamics in Monolayer MoS₂ FETsInproceedings Konferenzbeitrag 28-Oct-2025
2Waldhör, Dominic ; Karl, Alexander ; Verdianu, Axel ; Bahrami, Mina ; Knobloch, Theresia ; Grasser, Tibor Insights from Hysteresis Analysis in 2D MOSFETsPresentation VortragOct-2025
3Waldhör, Dominic Unveiling Defects at the Semiconductor/Oxide Interface: A Multiscale Modeling ApproachPresentation VortragOct-2025
4Ghosh-2025-Microelectronic Engineering-vor.pdf.jpgGhosh, Rittik ; Provias, Alexandros ; Karl, Alexander ; Wilhelmer, Christoph ; Knobloch, Theresia ; Davoudi, Mohammad Rasool ; Sattari Esfahlan, Seyedmahdi ; Waldhör, Dominic ; Grasser, Tibor Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS₂ FETsArticle Artikel 15-Sep-2025
5Waldhör, Dominic ; Feil, Maximilian ; Grasser, Tibor Optical spectroscopy of interfacial point defects via electrically stimulated recombination in fully processed silicon carbide power MOSFETsPresentation VortragSep-2025
6Wilhelmer-2025-Physical Review Materials-vor.pdf.jpgWilhelmer, Christoph ; Turiansky, Mark E. ; Waldhör, Dominic ; Cvitkovich, Lukas ; Van de Walle, Chris G. ; Grasser, Tibor Optical properties of vacancies in aluminum oxide (α−Al₃O₃) from first principlesArticle Artikel Sep-2025
7Waldhör, Dominic ; Turiansky, Mark ; Lee, woncheol ; Van De Walle, Chris G. ; Grasser, Tibor First-Principles Analysis of Hole-Induced Si-H Bond Dissociation in Silicon DioxidePresentation VortragAug-2025
8Bahrami, Mina ; Knobloch, Theresia ; Khakbaz, Pedram ; Davoudi, Mohammad Rasool ; Karl, Alexander ; Sattari-Esfahlan, Seyed Mehdi ; Waldhoer, Dominic ; Grasser, Tibor Evaluation of Insulator Candidates for Nanoelectronics Based on 2D MaterialsInproceedings Konferenzbeitrag 30-Jun-2025
9Giovanelli-2025-Surfaces-vor.pdf.jpgGiovanelli, Giulia ; Borghi, Mauro ; Lodi, Alessandro ; Grasser, Tibor ; Pasquali, Luca Thin epitaxial ionic fluoride films for electronics applicationsArticle Artikel Jun-2025
10Dubey-2025-IEEE Transactions on Electron Devices-vor.pdf.jpgDubey, Prabhat Kumar ; Marian, Damiano ; Toral-Lopez, Alejandro ; Knobloch, Theresia ; Grasser, Tibor ; Fiori, Gianluca Simulation of Vertically Stacked 2-D Nanosheet FETsArticle Artikel Mar-2025
11Wilhelmer, Christoph ; Waldhör, Dominic ; Knobloch, Theresia ; Stampfer, Bernhard ; Grasser, Tibor First-principles investigations of noise in ultra-scaled 2D field effect transistorsPresentation Vortrag12-Feb-2025
12Boschetto, G. ; Wilhelmer, Christoph ; Cvitkovich, Lukas ; Li, J. ; Waldhör, Dominic ; Grasser, Tibor ; Martinez, B. Multi-Scale Simulation Framework for the Modelling of Charge Capture and Emission in Spin Qubit DevicesInproceedings Konferenzbeitrag 2025
13Franckel, Mathilde L.D. ; Turiansky, Mark E. ; Waldhör, Dominic ; Van De Walle, Chris G. First-principles study of proton migration in indium oxideArticle Artikel 1-Dec-2024
14Ghosh, Rittik ; Knobloch, Theresia ; Karl, Alexander ; Wilhelmer, Christoph ; Provias, Alexandros ; Waldhor, Dominic ; Grasser, Tibor Modeling the Impact of Interface and Border Traps on Hysteresis in Encapsulated Monolayer MoS₂ Based Double Gated FETsInproceedings Konferenzbeitrag 17-Oct-2024
15Mounir, Ahmed ; Iniguez, Benjamin ; Lime, Francois ; Kloes, Alexander ; Knobloch, Theresia ; Grasser, Tibor Compact I-V Model for back-gated and double-gated TMD FETsArticle Artikel Sep-2023
16Ravichandran, Harikrishnan ; Knobloch, Theresia ; Pannone, Andrew ; Karl, Alexander ; Stampfer, Bernhard ; Waldhör, Dominic ; Zheng, Yikai ; Sakib, Najam ; Karim Sadaf, Muhatsim ; Pendurthi, Rahul ; Torsi, Riccardo ; Robinson, Joshua A. ; Grasser, Tibor ; Das, Saptarshi Observation of Rich Defect Dynamics in Monolayer MoS₂Article Artikel 25-Jul-2023
17Waldhoer-2023-Microelectronics Reliability-vor.pdf.jpgWaldhoer, Dominic ; Schleich, Christian ; Michl, Jakob Daniel ; Grill, Alexander ; Claes, Dieter ; Karl, Alexander ; Knobloch, Theresia ; Rzepa, Gerhard ; Franco, Jacopo ; Kaczer, Ben ; Waltl, Michael ; Grasser, Tibor Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devicesArticle Artikel Jul-2023
18Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI CircuitsInproceedings Konferenzbeitrag28-May-2023
19Knobloch, Theresia ; Grasser, Tibor Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional MaterialsInproceedings Konferenzbeitrag 28-May-2023
20Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI CircuitsArticle Artikel 19-May-2023