Waldhoer, D., Schleich, C., Michl, J. D., Grill, A., Claes, D., Karl, A., Knobloch, T., Rzepa, G., Franco, J., Kaczer, B., Waltl, M., & Grasser, T. (2023). Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices. Microelectronics Reliability, 146, 1–15. https://doi.org/10.1016/j.microrel.2023.115004
Bias temperature instability; Charge trapping; Compact modeling; Cryogenic modeling; Gate-leakage currents; Hysteresis; Nonradiative multiphonon theory; Random telegraph noise; Trap-assisted-tunneling
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Abstract:
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on a one-dimensional device geometry. Here we give an overview about the underlying theory, discuss newly introduced features compared to the original Comphy framework and also review recent advances in reliability physics enabled by these new features. The usefulness of Comphy v3.0 for the reliability community is highlighted by several practical examples including automatic extraction of defect distributions, modeling of TAT in high-κ capacitors and BTI/RTN modeling at cryogenic temperatures.
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Research facilities:
Vienna Scientific Cluster
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Project title:
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission)
CC BY 4.0
