Record link: 
http://hdl.handle.net/20.500.12708/196191
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Title: 
High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits
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Citation: 
Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells. 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells, Boston, MA, United States of America (the). The Electrochemical Society. https://doi.org/10.1149/MA2023-01331864mtgabs
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Publisher DOI: 
10.1149/MA2023-01331864mtgabs
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Knobloch, Theresia 
Selberherr, Siegfried 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells 
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Volume: 
MA2023-01(33)
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Date (published): 
2023
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Event name: 
243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells 
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Event date: 
28-May-2023 - 2-Jun-2023
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Event place: 
Boston, MA, United States of America (the)
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Number of Pages: 
1
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Publisher: 
The Electrochemical Society, Pennington
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Keywords: 
Field-Effect Transistor
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Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
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Research Areas: 
Nanoelectronics: 90%
Modeling and Simulation: 10%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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