Toggle navigation
reposiTUm
ABOUT REPOSITUM
HELP
Login
News
Browse by
Publication Types
Organizations
Researchers
Projects
TU Wien Academic Press
Open Access Series
Theses
Digitised Works
Year of Publication
Record link:
http://hdl.handle.net/20.500.12708/196191
-
Title:
High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits
en
Citation:
Knobloch, T., Selberherr, S., & Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. In
ECS Meeting Abstracts
(pp. 1864–1864). ECS Transactions. https://doi.org/10.1149/MA2023-01331864mtgabs
-
Publisher DOI:
10.1149/MA2023-01331864mtgabs
-
Publication Type:
Inproceedings - Abstract Book Contribution
en
Language:
English
-
Authors:
Knobloch, Theresia
Selberherr, Siegfried
Grasser, Tibor
-
Organisational Unit:
E360 - Institut für Mikroelektronik
-
Published in:
ECS Meeting Abstracts
-
Volume:
33
-
Date (published):
28-May-2023
-
Event name:
243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells
en
Event date:
28-May-2023 - 2-Jun-2023
-
Event place:
Boston, MA, United States of America (the)
-
Number of Pages:
1
-
Publisher:
ECS Transactions, Pennington
-
Keywords:
Field-Effect Transistor
en
Project title:
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission)
-
Research Areas:
Nanoelectronics: 90%
Modeling and Simulation: 10%
-
Science Branch:
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
-
Appears in Collections:
Conference Paper
Show full item record
Page view(s)
34
checked on Mar 30, 2024
Download(s)
5
checked on Mar 30, 2024
Google Scholar
TM
Check