Record link: 
http://hdl.handle.net/20.500.12708/224261
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Title: 
Optical spectroscopy of interfacial point defects via electrically stimulated recombination in fully processed silicon carbide power MOSFETs
en
Citation: 
Waldhör, D., Feil, M., & Grasser, T. (2025, September). Optical spectroscopy of interfacial point defects via electrically stimulated recombination in fully processed silicon carbide power MOSFETs [Conference Presentation]. International Conference on Defects in Semiconductors (ICDS 2025), Shanghai, China. http://hdl.handle.net/20.500.12708/224261
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Publication Type: 
Presentation - Conference Presentation
en
Language: 
English
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Authors: 
Waldhör, Dominic 
Feil, Maximilian 
Grasser, Tibor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
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Date (published): 
Sep-2025
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Event name: 
International Conference on Defects in Semiconductors (ICDS 2025) 
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Event date: 
14-Sep-2025 - 19-Sep-2025
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Event place: 
Shanghai, China
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Keywords: 
silicon carbide; spectroscopy; interface defects
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Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
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Research Areas: 
Surfaces and Interfaces: 80%
Modeling and Simulation: 20%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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