Record link: 
http://hdl.handle.net/20.500.12708/224251
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Title: 
First-Principles Analysis of Hole-Induced Si-H Bond Dissociation in Silicon Dioxide
en
Citation: 
Waldhör, D., Turiansky, M., Lee, woncheol, Van De Walle, C. G., & Grasser, T. (2025, August). First-Principles Analysis of Hole-Induced Si-H Bond Dissociation in Silicon Dioxide [Poster Presentation]. PSI-K 2025, Lausanne, Switzerland. http://hdl.handle.net/20.500.12708/224251
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Publication Type: 
Presentation - Poster Presentation
en
Language: 
English
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Authors: 
Waldhör, Dominic 
Turiansky, Mark 
Lee, woncheol 
Van De Walle, Chris G. 
Grasser, Tibor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials 
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Date (published): 
Aug-2025
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Event name: 
PSI-K 2025 
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Event date: 
25-Aug-2025 - 28-Aug-2025
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Event place: 
Lausanne, Switzerland
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Keywords: 
silicon dioxide; reliability; density functional theory
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Research facilities: 
Vienna Scientific Cluster 
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Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
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Research Areas: 
Nanoelectronics: 25%
Modeling and Simulation: 75%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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