Record link: 
http://hdl.handle.net/20.500.12708/226015
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Title: 
Multi-Scale Simulation Framework for the Modelling of Charge Capture and Emission in Spin Qubit Devices
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Citation: 
Boschetto, G., Wilhelmer, C., Cvitkovich, L., Li, J., Waldhör, D., Grasser, T., & Martinez, B. (2025). Multi-Scale Simulation Framework for the Modelling of Charge Capture and Emission in Spin Qubit Devices. In 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4). IEEE. https://doi.org/10.1109/SISPAD66650.2025.11186020
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Publisher DOI: 
10.1109/SISPAD66650.2025.11186020
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Boschetto, G. 
Wilhelmer, Christoph 
Cvitkovich, Lukas 
Li, J. 
Waldhör, Dominic 
Grasser, Tibor 
Martinez, B. 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials 
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Published in: 
2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 
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ISBN: 
979-8-3315-4883-4
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DOI of the book: 
10.1109/SISPAD66650.2025
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Date (published): 
2025
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Event name: 
2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 
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Event date: 
24-Sep-2025 - 26-Sep-2025
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Event place: 
Grenoble, France
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Number of Pages: 
4
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Publisher: 
IEEE
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Peer reviewed: 
Yes
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Keywords: 
charge noise; Si Spin qubit; density functional theory; TCAD; nonradiative multi-phonon (NMP) theory
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Abstract: 
Charge transfer events can degrade the performance of spin qubits by inducing instabilities and decoherence. We present a multi-scale simulation approach to model these transitions and quantify their impact on qubit properties. Applying this framework to hole transfer between hydrogen bridge defects in SiO<inf>2</inf> and nearby gates, we find that, while their slow dynamics and large electrostatic impact rule them out as the main source of charge-noise-driven decoherence, such events can account for observed device instabilities.
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Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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