Record link: 
http://hdl.handle.net/20.500.12708/226005
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Title: 
Evaluation of Insulator Candidates for Nanoelectronics Based on 2D Materials
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Citation: 
Bahrami, M., Knobloch, T., Khakbaz, P., Davoudi, M. R., Karl, A., Sattari-Esfahlan, S. M., Waldhoer, D., & Grasser, T. (2025). Evaluation of Insulator Candidates for Nanoelectronics Based on 2D Materials. In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp. 1–3). IEEE. https://doi.org/10.1109/EDTM61175.2025.11041216
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Publisher DOI: 
10.1109/EDTM61175.2025.11041216
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Bahrami, Mina 
Knobloch, Theresia 
Khakbaz, Pedram 
Davoudi, Mohammad Rasool 
Karl, Alexander 
Sattari-Esfahlan, Seyed Mehdi 
Waldhoer, Dominic 
Grasser, Tibor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials 
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Published in: 
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 
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ISBN: 
979-8-3315-0416-8
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DOI of the book: 
10.1109/EDTM61175.2025
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Date (published): 
30-Jun-2025
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Event name: 
IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 
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Event date: 
9-Mar-2025 - 12-Mar-2025
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Event place: 
Hong Kong, Hong Kong
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Number of Pages: 
3
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Publisher: 
IEEE
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Peer reviewed: 
Yes
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Keywords: 
DFT; 2D materials; field-effect transistors (FETs); Strontium Titanate
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Abstract: 
Despite considerable advancements in electronic devices based on 2D materials, their performance suffers from the lack of suitable gate insulators. Here, we focus on two promising insulators: Strontium titanate (SrTiO<inf>3</inf>), a high-κ perovskite used with MoS<inf>2</inf> to create high-performance n-type field-effect transistors (FETs) and bismuth oxyselenide (Bi<inf>2</inf>O<inf>2</inf>Se), whose native oxide (Bi<inf>2</inf>SeO<inf>5</inf>) serves as a gate dielectric. We evaluate the main performance criteria and suitability of these insulators as gate dielectrics based on multi-scale simulations (DFT and TCAD).
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Research facilities: 
Vienna Scientific Cluster 
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Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
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Research Areas: 
Modeling and Simulation: 100%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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