Mounir, A., Iniguez, B., Lime, F., Kloes, A., Knobloch, T., & Grasser, T. (2023). Compact I-V Model for back-gated and double-gated TMD FETs. Solid-State Electronics, 207, 1–5. https://doi.org/10.1016/j.sse.2023.108702
2D FETs; MoS2 FETs; Unified charge control model; DC compact model
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Abstract:
A physics-based analytical DC compact model for double and single gate TMD FETs is presented. The model is developed by calculating the charge density inside the 2D layer which is expressed in terms of the Lambert W function that recently has become the standard in SPICE simulators. The current is then calculated in terms of the charge densities at the drain and source ends of the channel. We validate our model against measurement data for different device structures. A superlinear current increase above certain gate voltage has been observed in some MoS2 FET devices, where we present a new mobility model to account for the observed phenomena. Despite the simplicity of the model, it shows very good agreement with the experimental data.
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Project title:
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission)
CC BY-NC-ND 4.0
