Record link: 
http://hdl.handle.net/20.500.12708/196190
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Title: 
Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials
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Citation: 
Knobloch, T., & Grasser, T. (2023). Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials. In ECS Meeting Abstracts : 243rd ECS Meeting. 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells (SOFC-XVIII), Boston, MA, United States of America (the). The Electrochemical Society. https://doi.org/10.1149/MA2023-01131319mtgabs
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Publisher DOI: 
10.1149/MA2023-01131319mtgabs
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Knobloch, Theresia 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
ECS Meeting Abstracts : 243rd ECS Meeting 
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Volume: 
MA2023-01(48)
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Date (published): 
2023
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Event name: 
243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells (SOFC-XVIII) 
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Event date: 
28-May-2023 - 2-Jun-2023
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Event place: 
Boston, MA, United States of America (the)
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Number of Pages: 
1
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Publisher: 
The Electrochemical Society, Pennington
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Keywords: 
Field-Effect Transistor
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Research facilities: 
Vienna Scientific Cluster 
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Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
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Research Areas: 
Nanoelectronics: 80%
Modeling and Simulation: 20%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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