Record link: 
http://hdl.handle.net/20.500.12708/196190
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Title: 
Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials
en
Citation: 
Knobloch, T., & Grasser, T. (2023). Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells. 243rd Electrochemical Society meeting (ECS Meeting) 2023, Boston, MA, United States of America (the). The Electrochemical Society. https://doi.org/10.1149/MA2023-01131319mtgabs
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Publisher DOI: 
10.1149/MA2023-01131319mtgabs
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Knobloch, Theresia 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells 
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Volume: 
MA2023-01(13)
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Date (published): 
2023
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Event name: 
243rd Electrochemical Society meeting (ECS Meeting) 2023 
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Event date: 
28-May-2023 - 2-Jun-2023
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Event place: 
Boston, MA, United States of America (the)
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Number of Pages: 
1
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Publisher: 
The Electrochemical Society, Pennington
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Peer reviewed: 
Yes
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Keywords: 
Field-Effect Transistor
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Research facilities: 
Vienna Scientific Cluster 
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Project title: 
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission) 
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Research Areas: 
Nanoelectronics: 80%
Modeling and Simulation: 20%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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