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Record link:
http://hdl.handle.net/20.500.12708/196190
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Title:
Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials
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Citation:
Knobloch, T., & Grasser, T. (2023). Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials. In
ECS Meeting Abstracts
(pp. 1319–1319). ECS Transactions. https://doi.org/10.1149/MA2023-01131319mtgabs
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Publisher DOI:
10.1149/MA2023-01131319mtgabs
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Publication Type:
Inproceedings - Abstract Book Contribution
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Language:
English
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Authors:
Knobloch, Theresia
Grasser, Tibor
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Organisational Unit:
E360 - Institut für Mikroelektronik
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Published in:
ECS Meeting Abstracts
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Date (published):
28-May-2023
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Event name:
243rd Electrochemical Society meeting (ECS Meeting) 2023
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Event date:
28-May-2023 - 2-Jun-2023
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Event place:
Boston, MA, United States of America (the)
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Number of Pages:
1
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Publisher:
ECS Transactions, Pennington
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Peer reviewed:
Yes
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Keywords:
Field-Effect Transistor
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Research facilities:
Vienna Scientific Cluster
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Project title:
Fluoride für die nächste Generation von 2D Nanoelektronik: 101021351 (European Commission)
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Research Areas:
Nanoelectronics: 80%
Modeling and Simulation: 20%
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Science Branch:
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper
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