Record link: 
http://hdl.handle.net/20.500.12708/202607
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Title: 
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling
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Citation: 
Bendra, M., Pruckner, B., Lacerda de Orio, R., Selberherr, S., Goes, W., & Sverdlov, V. (2024). Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. In Proceedings 2024 Device Research Conference (DRC) (pp. 1–2). https://doi.org/10.1109/DRC61706.2024.10605512
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Publisher DOI: 
10.1109/DRC61706.2024.10605512
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Bendra, Mario 
Pruckner, Bernhard 
Lacerda de Orio, Roberto 
Selberherr, Siegfried 
Goes, Wolfgang 
Sverdlov, Viktor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
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Published in: 
Proceedings 2024 Device Research Conference (DRC) 
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ISBN: 
979-8-3503-7374-5
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Date (published): 
2024
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Event name: 
2024 The 82nd Device Research Conference (DRC 2024) 
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Event date: 
24-Jun-2024 - 26-Jun-2024
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Event place: 
Maryland, United States of America (the)
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Number of Pages: 
2
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Peer reviewed: 
Yes
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Keywords: 
Double Spin Torque Magnetic Tunnel Junction; Interlayer Exchange Coupling; Sub-nanosecond Switching Times; Memory Reliability and Performance
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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