Record link: 
http://hdl.handle.net/20.500.12708/202608
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Title: 
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect
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Citation: 
Pruckner, B., Jorstad, N. P., Hadamek, T., Gös, W., Selberherr, S., & Sverdlov, V. (2024). Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1584–1589). https://doi.org/10.1109/MIPRO60963.2024.10569617
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Publisher DOI: 
10.1109/MIPRO60963.2024.10569617
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Pruckner, Bernhard 
Jorstad, Nils Petter 
Hadamek, Tomas 
Gös, Wolfgang 
Selberherr, Siegfried 
Sverdlov, Viktor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) 
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ISBN: 
979-8-3503-8251-8
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Date (published): 
20-May-2024
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Event name: 
47th MIPRO ICT and Electronics Convention (MIPRO 2024) 
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Event date: 
20-May-2024 - 24-May-2024
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Event place: 
Opatija, Croatia
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Number of Pages: 
6
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Peer reviewed: 
Yes
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Keywords: 
SOT-MRAM; magnetic spin Hall effect; LLG; drift-diffusion
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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