Record link: 
http://hdl.handle.net/20.500.12708/202615
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Title: 
Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices
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Citation: 
Pruckner, B., Jorstad, N. P., Goes, W., Selberherr, S., & Sverdlov, V. (2024). Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abtract Book (pp. 154–155).
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Pruckner, Bernhard 
Jorstad, Nils Petter 
Goes, Wolfgang 
Selberherr, Siegfried 
Sverdlov, Viktor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abtract Book 
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Date (published): 
2024
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Event name: 
10th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024) 
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Event date: 
15-May-2024 - 17-May-2024
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Event place: 
Athen, Greece
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Number of Pages: 
2
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Peer reviewed: 
Yes
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Keywords: 
SOT-MRAM; Field-free perpendicular switching; Magnetic spin Hall effect; LLG; Drift-diffusion
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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