Record link: 
http://hdl.handle.net/20.500.12708/207878
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Title: 
Fluoride dielectrics for 2D transistors
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Citation: 
Grasser, T., Waltl, M., & Knobloch, T. (2024). Fluoride dielectrics for 2D transistors. Nature Nanotechnology, 19(7), 880–881. https://doi.org/10.1038/s41565-024-01710-5
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Publisher DOI: 
10.1038/s41565-024-01710-5
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Publication Type: 
Article - Review Article
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Language: 
English
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Authors: 
Grasser, Tibor 
Waltl, Michael 
Knobloch, Theresia 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
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Journal: 
Nature Nanotechnology 
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ISSN: 
1748-3387
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Date (published): 
8-Jul-2024
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Number of Pages: 
2
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Publisher: 
NATURE PORTFOLIO
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Peer reviewed: 
Yes
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Keywords: 
2D Materials; Nanotechnology; Gate Insulator
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Abstract: 
Room-temperature wafer-scale thermal evaporation of 20 different polycrystalline rare-earth-metal fluoride films for their use in 2D transistors is demonstrated.
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Research Areas: 
Modeling and Simulation: 50%
Computational Materials Science: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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