Wahid, S. N., Leitgeb, M., Pfusterschmied, G., & Schmid, U. (2024). A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer. Materials Science Forum, 1124, 35–41. https://doi.org/10.4028/p-8AEonP
E366-02 - Forschungsbereich Mikrosystemtechnik E366-01 - Forschungsbereich Mikro- und Nanosensorik
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Zeitschrift:
Materials Science Forum
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ISSN:
0255-5476
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Datum (veröffentlicht):
21-Aug-2024
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Umfang:
7
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Verlag:
Trans Tech Publications Ltd.
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Peer Reviewed:
Ja
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Keywords:
4H-SiC; Controlled Spalling; MAPCE; Ni Plating; Thin Foil
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Abstract:
Porosifying the surface of a single crystalline silicon carbide (4H-SiC) wafer with the means of metal assisted photo chemical etching (MAPCE) promotes the adhesion of an electroplated nickel (Ni) layer. By utilizing a mechanical peel-off process, a Ni layer with tailored mechanical stress is peeled off such that also a thin layer of 4H-SiC is teared apart from the wafer as well.
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Forschungsschwerpunkte:
Materials Characterization: 50% Surfaces and Interfaces: 50%
CC BY 4.0
