Simulation of SAF-Enhanced Multilayered STT-MRAM Structures

Abstract

The reliability of multilayered spin-transfer torque magnetoresistive random access memory with synthetic antiferro-magnets is critical for applications such as computing-in-memory systems, high-performance computing, and high-density storage. This study focuses on the interlayer exchange coupling (lEC) within magnetic tunnel junction structures, which are fundamental to STT-MRAM performance. By using finite element method simulations and the Landau-Lifshitz-Gilbert equation, we explore the effects of lEC on magnetic stability and spin-transfer torque switching efficiency. Our results demonstrate that optimizing lEC can enhance data retention and improve write/read speeds, addressing miniaturization challenges and reliability issues in downscaled STT-MRAM. The findings highlight the importance of lEC in defining magnetic orientations, influenced by spacer properties, and offer insights for developing next-generation memory systems. This work underscores the critical role of magnetic coupling in the dynamics and stability of spintronic devices, providing strategies for improving the reliability and efficiency of future STT-MRAM technologies.