Record link: 
http://hdl.handle.net/20.500.12708/212125
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Title: 
Cluster-based model for dopant activation in SiC
en
Citation: 
Bamer, B., Hoessinger, A., & Filipovic, L. (2024). Cluster-based model for dopant activation in SiC. In MESS24: Microelectronic Systems Symposium (pp. 47–47). http://hdl.handle.net/20.500.12708/212125
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Publication Type: 
Inproceedings - Abstract Book Contribution
en
Language: 
English
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Authors: 
Bamer, Balazs 
Hoessinger, Andreas 
Filipovic, Lado 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials 
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Published in: 
MESS24: Microelectronic Systems Symposium 
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ISBN: 
978-3-903249-24-0
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Volume: 
112
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Date (published): 
2024
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Event name: 
MESS24: Microelectronic Systems Symposium 
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Event date: 
6-Jun-2024 - 7-Jun-2024
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Event place: 
Vienna, Austria
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Number of Pages: 
1
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Keywords: 
Ion Implantation; MaxLIPO+TR Optimizer; Silicon Carbide (SiC)
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Project title: 
Multi-Scale-Prozessmodellierung von Halbleiter-Bauelemente und -Sensoren: 00000 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Modeling and Simulation: 100%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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