Record link: 
http://hdl.handle.net/20.500.12708/212143
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Title: 
Modeling Advanced Perpendicular MRAM Cells: Generating Spin Currents for Fast Field-free Cell Switching
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Citation: 
Jorstad, N. P., Pruckner, B., Bendra, M., Goes, W., & Sverdlov, V. (2024). Modeling Advanced Perpendicular MRAM Cells: Generating Spin Currents for Fast Field-free Cell Switching. In The 5th International Congress on Advanced Materials Sciences and Engineering: Abstract Book (pp. 46–46). http://hdl.handle.net/20.500.12708/212143
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Jorstad, Nils Petter 
Pruckner, Bernhard 
Bendra, Mario 
Goes, Wolfgang 
Sverdlov, Viktor 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
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Published in: 
The 5th International Congress on Advanced Materials Sciences and Engineering: Abstract Book 
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Date (published): 
2024
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Event name: 
The 5th International Congress on Advanced Materials Sciences and Engineering (AMSE 2024) 
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Event date: 
23-Jul-2024 - 26-Jul-2024
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Event place: 
Lovran, Croatia
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Number of Pages: 
1
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Peer reviewed: 
Yes
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Keywords: 
Modeling; Perpendicular MRAM; Spin Currents; Field-free Switching
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Nanoelectronics: 50%
Modeling and Simulation: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
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