Record link: 
https://doi.org/10.34726/hss.2025.120536
http://hdl.handle.net/20.500.12708/213327
-
Title: 
Electrical characterization of p-GaN gate HEMTs: The role of intentional hole injection for dynamic RDS,on recovery
en
Citation: 
Poll, T. (2025). Electrical characterization of p-GaN gate HEMTs: The role of intentional hole injection for dynamic RDS,on recovery [Diploma Thesis, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2025.120536
-
reposiTUm DOI: 
10.34726/hss.2025.120536
-
CatalogPlus: 
AC17470368
-
Publication Type: 
Thesis - Diplomarbeit
en
Language: 
English
-
Authors: 
Poll, Thomas 
-
Advisor: 
Werner, Wolfgang 
-
Organisational Unit: 
E134 - Institut für Angewandte Physik 
-
Date (published): 
2025
-
Number of Pages: 
75
-
Keywords: 
HEMT; GaN; Hot carrier stress
de
 
HEMT; GaN; Hot carrier stress
en
Additional information: 
Arbeit an der Bibliothek noch nicht eingelangt - Daten nicht geprüft (Arbeit nachträglich gesperrt bis 02/2027)
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers
-
License: 
In Copyright
en
Appears in Collections:
Thesis

Fulltext (Version of Record (published version))
Adobe PDF
(2.79 MB)
In Copyright
Embargo. Accessible from 12.02.2027
Show full item record

Page view(s)

65
checked on Mar 20, 2025

Download(s)

46
checked on Mar 20, 2025

Google ScholarTM

Check