Record link: 
https://doi.org/10.34726/hss.2025.120536
http://hdl.handle.net/20.500.12708/213327
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Title: 
Electrical characterization of p-GaN gate HEMTs : The role of intentional hole injection for dynamic RDS,on recovery
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Citation: 
Poll, T. (2025). Electrical characterization of p-GaN gate HEMTs : The role of intentional hole injection for dynamic RDS,on recovery [Diploma Thesis, Technische Universität Wien]. reposiTUm. https://doi.org/10.34726/hss.2025.120536
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reposiTUm DOI: 
10.34726/hss.2025.120536
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CatalogPlus: 
AC17470368
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Publication Type: 
Thesis - Diplomarbeit
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Language: 
English
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Authors: 
Poll, Thomas 
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Advisor: 
Werner, Wolfgang 
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Organisational Unit: 
E134 - Institut für Angewandte Physik 
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Date (published): 
2025
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Number of Pages: 
75
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Keywords: 
HEMT; GaN; Hot carrier stress
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Additional information: 
Abweichender Titel nach Übersetzung der Verfasserin/des Verfassers
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License: 
In Copyright
de
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