Record link: 
http://hdl.handle.net/20.500.12708/223592
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Title: 
Theoretical Insights into Next-Generation Hot Carrier Solar Cells
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Citation: 
Filipovic, L., Baranowski, I., Faber, T., Nedjalkov, M., Koster, L. J. A., Vasileska, D., & Goodnick, S. (2025). Theoretical Insights into Next-Generation Hot Carrier Solar Cells. In 2025 Photonics North (PN) (pp. 1–2). IEEE. https://doi.org/10.1109/PN66844.2025.11097145
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Publisher DOI: 
10.1109/PN66844.2025.11097145
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Filipovic, Lado 
Baranowski, Izak 
Faber, Tim 
Nedjalkov, Mihail 
Koster, L J A 
Vasileska, Dragica 
Goodnick, Stephen 
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Organisational Unit: 
E360-01 - Forschungsbereich Mikroelektronik 
E056-04 - Fachbereich TU-DX: Towards Applications of 2D Materials 
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Published in: 
2025 Photonics North (PN) 
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ISBN: 
979-8-3315-5623-5
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Date (published): 
22-May-2025
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Event name: 
2025 Photonics North (PN) 
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Event date: 
20-May-2025 - 23-May-2025
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Event place: 
Ottawa, Canada
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Number of Pages: 
2
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Publisher: 
IEEE
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Peer reviewed: 
Yes
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Keywords: 
Carrier Thermalization; Ensemble Monte Carlo; Hot Carrier Solar Cell; III-V Quantum Wells; Metal Halide Perovskite; Phonon Bottleneck
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Abstract: 
To surpass the Shockley-Queisser limit, hot carrier solar cells (HCSCs) require absorber materials with significantly inhibited carrier cooling. The debated mechanisms governing the promisingly slow cooling in metal halide perovskites (MHPs) and III-V multi-quantum wells (MQWs) are investigated using a comprehensive Ensemble Monte Carlo (EMC) simulation framework. We quantify the hot-phonon bottleneck (HPB) effect in MHPs, detailing its dependence on carrier density and key phonon properties, and demonstrate the detrimental impact of a cold carrier background on cooling rates. By successfully modeling experimental data for type-II InAs/AlAsSb MQWs, we validate our approach and confirm that nanostructuring enhances the phonon bottleneck. This work provides key physical insights and design principles for engineering advanced HCSC materials.
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Research facilities: 
Vienna Scientific Cluster 
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Project title: 
Multi-Scale-Prozessmodellierung von Halbleiter-Bauelemente und -Sensoren: 00000 (Christian Doppler Forschungsgesells) 
Adsorbatabhängige elektrische Leitfähigkeit von MoS2-FETs: P 35318-N (FWF - Österr. Wissenschaftsfonds) 
TUD-X: Anwendungen von 2D Materialien: DOC 142-N (FWF - Österr. Wissenschaftsfonds) 
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Research Areas: 
Modeling and Simulation: 50%
Computational Materials Science: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
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